Electrodeposition of CuInxGa1−xSe2 thin films from sulfosalicylic acid

Abstract In the present study, single-step electrodeposition of a CuInGaSe 2 film from the sulfosalicylic acid electrolyte containing Cu(II), In(III), Ga(III), and Se(IV) species was examined. It was showed that individual Ga(III) ions do not reduce at glass carbon electrode in selected conditions. Deposition of the desired CuInGaSe 2 film as the main compound was achieved by fixing appropriate applied potentials. The analysis of cyclic voltammetry curves for joint reduction of two, three and four ions composed this semiconductor compound allowed to choose the optimal conditions for electrodeposition. The applied potential should be more negative, then −700 mV, ratio concentration ions in electrolyte Cu(II):Se(lV):In(III):Ga(III) equal 1:2:4:4, t  = ∼70 °C. It was fabricated p-type CuInGaSe 2 as a single phase. A new possible pathway to prepare chalcopyrite structure thin films from simple single-step electrodeposition of a quaternary precursor from sulfosalicylic acid should be used for photovoltaic application.