Ku-Band 20W GaAs Power PHEMT

A GaAs power PHEMT with a dielectric-assisted T-shaped gate is reported.The gate length and the dimension of the gate head can be controlled in the T-shaped gate processing,and good process controllability and high yield can be achieved.GaAs power PHEMTs with a gate width of 19.2mm and Ku-band internally matched transistors with the combination of two chips are developed.The high power device demonstrates an output power of 20W with a power gain of 6dB and a typical power-added efficiency of 31% across the band of 14.0～14.5GHz.