Transfer of n-type GaSb onto GaAs substrate by hydrogen implantation and wafer bonding

Many GaSb devices would greatly benefit from the availability of a semi-insulating substrate. Since semi-insulating GaSb is not currently available, the formation of thin GaSb layers through wafer bonding and tranfer onto a semi-insulating GaAs substrate was investigated. GaSb-on-insulator structures, formed on GaAs substrates, were realized by the ion-cut process using H+ ions. Blistering, bonding and layer splitting phenomena were studied to optimize the ion dose and the process window. Bonded structures of thin layers of GaSb bonded to GaAs wafers were formed using a borosilicate glass (BSG) layer. The transferred GaSb layers were characterized by atomic force microscopy, MeV helium ion channeling and high-resolution x-ray diffractometry. The transferred film possessed a narrow x-ray linewidth of about 140 arcsec indicating improved crystalline quality over the direct growth of GaSb on GaAs.