Old Web
English
Sign In
Acemap
>
Paper
>
Dangling bond defects in SiC: an ab initio study
Dangling bond defects in SiC: an ab initio study
2018
Blair R. Tuttle
Keywords:
Computational chemistry
Ab initio
Dangling bond
Chemistry
Crystallography
Materials science
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]