Two-component photoluminescence decay and carrier localization in InGaN/GaN multiple quantum well structures

Shih-Wei Feng,Yung-Chen Cheng,C. C. Yang,Chin-Yi Tsai,Yen-Sheng Lin,Chen Hsu,Kung-Jeng Ma,Jen-Inn Chyi

Two-component photoluminescence decay and carrier localization in InGaN/GaN multiple quantum well structures

2001

Shih-Wei Feng
Yung-Chen Cheng
C. C. Yang
Chin-Yi Tsai
Yen-Sheng Lin
Chen Hsu
Kung-Jeng Ma
Jen-Inn Chyi

Localization energies of localized states of InGaN/GaN quantum well structures were obtained by fitting the data of photoluminescence (PL) and amplified spontaneous emission. The two-component decay times in time-resolved PL show consistent results.

Keywords:

Optoelectronics
Superradiance
Physics
Photoluminescence
Quantum well
Condensed matter physics
Amplified spontaneous emission
semiconductor quantum wells
multiple quantum
time resolved spectra

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