Current regulation diode chip and manufacturing method thereof

2010 
The invention discloses a current regulation diode chip, which comprises a substrate layer and an epitaxial layer covered on the substrate layer, wherein a drain region is formed on a central area of the epitaxial layer, and a first ohmic contact diffusion layer and a first metal layer covered on the first ohmic contact diffusion layer are arranged on the surface of the drain region further; an annular P-type grid region and a channel positioned below the P-type grid region are respectively formed on the outer edge of the drain region; an annular source region is arranged on the outer edge of the channel, and a second ohmic contact diffusion layer is arranged on the surface of the source region further; a through diffusion layer 5 is arranged on the outer edge of the source region; a second metal layer is arranged on the outer side of the grid region, the source region and the inner side of the through diffusion layer; and a third metal layer covered on the reverse side is arranged at the bottom of the substrate layer. The current regulation diode chip can meet packaging requirements, and has the advantages of low cost of a metalizing process and a packaging process and the like.
    • Correction
    • Source
    • Cite
    • Save
    • Machine Reading By IdeaReader
    0
    References
    0
    Citations
    NaN
    KQI
    []