Ion beam irradiation of Langmuir–Blodgett polydiacetylene films

Effects of ion beam irradiation of ≂100‐nm‐thick Langmuir–Blodgett polydiacetylene films have been investigated in the low‐energy regime E<200 keV. Optical absorption and electrical resistivity measurements have been performed to characterize the modified materials. The results show that changes in optical and electrical properties associated with structural modifications are strongly correlated.