The morphology and characteristics of TaSi2/Si films oxidized at high pressure

The oxidation of Ta silicide on Si substrates has been investigated for pressures from 1 to 10.7 atm. The oxidation of these films fits the Deal–Grove linear–parabolic model, with a direct proportionality of the rate constants to the oxidation pressure. In contrast to results reported for single‐crystal Si, the activation energies of the rate constants are found to depend upon pressure. Morphologically, transmission electron microscope micrographs show these oxidized silicide films to be rough, and possess SiO2 between grain boundaries. In addition, the dielectric strength of these oxides is found to be between 4 and 8 MV/cm.