Micro‐analysis of light emission properties of GaN‐based laser diodes

In-depth and in-plane changes of emission intensity from GaN-based laser diode structures were studied using cathodoluminescence, photoluminescence (PL), micro-PL and a Kelvin probe (potential fluctuations). We show that even at high excitation density potential fluctuations are not screened in active layers of laser diode structures. Potential fluctuations are enhanced in p-type doped layers. We also found that dislocations are formed there, which can penetrate to active region of LD devices. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)