MOCVD Growth of GaAsP/InGa(Al)P/GaAs High Power 808 nm Laser Diode Material with Tensile Strained Quantum Well

High power 808 nm GaAsP/InGa(Al)P/GaAs semiconductor laser diode(LD) with Al-free tensile strained quantum well was designed.In order to improve the LDs' conversion efficiency and output power,asymmetric broad-area structure was introduced.The material quality was improved by optimizing the growth parameters for low pressure-MOCVD(LP-MOCVD).For the devices with 200 μm-wide stripe and 1500 μm-long cavity under continuous wave(CW) operation condition,the typical threshold current is 650 mA,the slope efficiency is 1.35 W/A,and the maximum output power reaches higher than 11 W.The lasing wavelength is 808.5 nm @5A and the far field profile(FFP) is tested with 8° of parallel and 30° of vertical direction.It was found that the output power density was effectively increased by this small divergence angle.