Temperature-Dependent RF Small-Signal and Noise Characteristics of SOI Dynamic Threshold Voltage MOSFETs

In this paper, temperature-dependent RF small-signal and noise characteristics of silicon-on-insulator (SOI) dynamic threshold voltage (DT) MOSFETs are experimentally examined. In the low-voltage regime, both the cutoff and maximum oscillation frequencies ( ft and f max ) tend to increase with temperature. In addition, the inherent body-related parasitics and the series resistance have much more impact on f max than ft . Besides, we found that the noise stemmed from the body resistance ( Rb ) would contribute to the output noise current, and degrade the minimum noise figure (NF min ). Our study may provide insights for RF circuit design using advanced SOI DT MOSFETs.