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Degradation of Power SiC MOSFET under Repetitive UIS and Short Circuit Stress
Degradation of Power SiC MOSFET under Repetitive UIS and Short Circuit Stress
2021
J. Marek
J. Kozarik
A. Chvála
M. Minárik
Ľ. Stuchlíková
Keywords:
degradation
Optoelectronics
Power (physics)
Short circuit
MOSFET
Materials science
Stress (mechanics)
Correction
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