High-performance 1.3 µm InGaAs vertical cavity surface emitting lasers

A report is presented on high-performance InGaAs/GaAs double quantum well vertical cavity surface emitting lasers (VCSELs) with record long emission wavelengths up to 1300 nm. Due to a large gain-cavity detuning these VCSELs show excellent temperature performance with very stable threshold current and output power characteristics. For 1.27 µm singlemode devices the threshold current is found to decrease from 2 to 1 mA between 10 and 90°C, while the peak output power only drops from 1 to 0.6 mW. Large-area 1300 nm VCSELs show multimode output power close to 3 mW.