A velocity-overshoot capacitance model for 0.1 μm MOS transistors

Abstract This article discusses an analytical velocity-overshoot capacitance model for a 0.1 μm MOS transistor. As verified by 2D simulation results, compared to the conventional model the analytical capacitance model considering velocity overshoot shows a smaller C SG and C DG value, because in velocity overshoot a smaller amount of electrons exist in the channel region. Compared to the C SG case, the larger decrease in C DG when considering velocity overshoot at high V D is the result of higher electron velocity in the post-saturation region.