Analysis and modeling methodology of strained-Si channel-on-insulator (SSOI) MOSFETs
2003
Compact physical models for SSOI MOSFETs are presented. The models consider strained-Si device features including mobility enhancement and band offsets with SSOI specific floating-body effect. The model validity is confirmed by fabricated 70 nm bulk strained-Si device.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
11
References
3
Citations
NaN
KQI