10 nm-scale edge- and step-quantum wires and related structures: Progress in their design, epitaxial synthesis and physics

This paper describes our recent studies to design and epitaxially synthesize 10 nm-scale quantum wire (QWR) structures and to clarify their transport and optical properties. We discuss :rst the epitaxial growth and physics study of both :eldinduced edge QWRs as well as T-shaped edge QWRs. We, then, propose two new edge QWR structures in which electric :elds play greater roles in the carrier con:nement. We then summarize our recent work on step QWRs, in which periodic bunched steps on a (1 1 1) B GaAs plane modulate the motion of 2D electrons at n-AlGaAs=GaAs heterojunctions. Finally, we discuss several approaches by which 10 nm-scale QDs are formed by the extended use of epitaxial techniques originally developed for the fabrication of QWRs. ? 1999 Elsevier Science B.V. All rights reserved.