Organic metal precursors compound for deposition of metal oxide, metal nitride and pure metal thin films and, method for preparing the same and, deposition process of the thin films using the same

PURPOSE: An organic metal precursor compound for depositing metal oxide, metal nitride, and metal thin film is provided to ensure high thermal stability and volatility. CONSTITUTION: An organic metal precursor compound for depositing metal oxide film, metal nitride film and pure metal thin film is denoted by chemical formula 1. A method for producing the organic metal precursor compound comprises: a step of adding 3LiNR3R4 in (R1CCR2)M(NR3R4)3 compound solution under the presence of organic solvent such as benzene, hexane, or toluene at low temperature; and a step of stirring, filtering and purifying. The metal oxide film, metal nitride film or meal thin film is formed on a substrate using the organic metal precursor compound through metal organic chemical vapor deposition(MOCVD) or atomic layer deposition(ALD). The deposition temperature is 200~1000°C.