EFFECTS OF ION-BEAM DEFECT ENGINEERING ON CARRIER CONCENTRATION PROFILES IN 50-KEV P+-IMPLANTED SI(100)

Shallower carrier concentration profiles in 50 keV P+-implanted Si(100) after annealing at 1000-degrees-C for 1 h have been observed when a buried amorphous layer was formed by an additional irradiation of 1.0 MeV Si+ ions prior to annealing (i.e., ion beam defect engineering process). The secondary defects formed in the MeV Si+ damaged region act as gettering sites for the collection of interstitials from the shallower depths which are responsible for the transient diffusion of P, and therefore the transient diffusion of P is reduced and the carrier concentration profiles become shallower.