Domain Control of ZnO Nanoparticles using a Coaxial Gas-Flow Ar/O 2 Pulse Plasma

A limited area, to which ZnO nanoparticles are selectively adhered, is called a domain. Formation of the domain was controlled by using a coaxial gas-flow Ar/O 2 pulse plasma. The mechanism of the domain formation was closely related to initial surface condition of Si substrate. Especially, cleaning process was crucial. Here, a patterning of the domain was employed by using a fine mesh as a template. Linear patterning was also established. The formation processes were estimated by SEM and EDX. The technique developed here will be applied to a selective nanoparticle patterning.