A method of forming a negatively charged passivation layer over a distributed p-doped region

The present invention generally provides a method for forming a passivation layer over a high quality p-doped region to form a solar cell device having a high efficiency. Embodiments of the present invention may be particularly useful for preparing a surface of a boron-doped region formed in a silicon substrate. In one embodiment, the methods involve exposing a surface of a solar cell substrate to a plasma, to clean and modify the physical, chemical and / or electrical properties of the surface, and then depositing a charged dielectric layer and the passivation layer thereon.