Performance of srbi2ta2o9 for low-voltage, non-volatile memory applications

Abstract The performance of SrBi2Ta2O9 for ferroelectric non-volatile memory applications is investigated. The temperature dependence of the hysteresis loops, small signal capacitance-voltage measurements, and fatigue resistance are reported. Increasing temperature accelerates fatigue, but excellent fatigue resistance to greater than 1012 cycles is found for temperatures of 125 °C and below. The difference between current-time curves for switched and unswitched capacitors using high-speed pulse measurements indicated the availability of 5.7 μC/cm2 for 3 V memory operation.