KrF bilayer resist defects: cause, analysis, and reduction
2008
Dual damascene processing for back end of the line (BEOL) layers can employ bilayer film stack approaches for
lithographic patterning. These bilayer resist systems are more prevalent for KrF layers and have many unique
characteristics, including silicon-containing photoresists and gap fill underlayer material that must also act as a bottom
anti-reflective coating (BARC). Bilayer resists pattern for copper deposition; as such, defect levels are a critical concern,
as any post-patterning bridging or residue defects can often times render an entire die inoperable due to electrical shorts
or breaks. Here, two such defect types were found: missing resist patterns and resist residue. Through several
experiments and with process optimization, the defect origins were elucidated and the defects themselves significantly
reduced. This work will detail the examination, root causes and eventual elimination of these significant bilayer resist
defects.
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