Gate Current Suppressed Lateral FEAs with Integrated TFTs

Lateral FEAs which have three terminals, stable anode current, and suppressed gate current are proposed and fabricated. In order to eliminate the path of electrons between tips and anode, the proposed FEAs are sealed by evaporation of oxide while Molybdenium in our privious work. Experimental results such as controllibility of gate electrode, a portion of the gate current for the anode current, and stability of the anode current are given. The proposed FEAs exhibit an excellent controllibility by gate electrode and stability of the emission current. The gate current of new FEAs is negligible compared with the ande current while that of the privious FEAs is about 20% of the anode current.