Study of radiation effects on AC-coupled silicon strip detectors

Abstract AC-coupled silicon strip detectors were exposed to neutron fluences of 5·10 13 n/cm 2 and to Co 60 photon doses of 2.8 Mrad. No change in the value of the coupling capacitors was observed. Polysilicon resistor values increased by 15% and saturated after 200 krad photon dose. They were stable under neutron irradiation. Thee interstrip punchthrough threshold voltage increased from 4 to 13 V under photon irradiation. The accumulation of fixed charges in SiO 2 was measured using MOS capacitors and the photon-induced surface current generation velocity was determined with gated diodes.