Flexible-substrate-based resistive random access memory with CRS action and preparation method thereof

The invention belongs to the technical field of semiconductor device storage, and particularly discloses a resistive random access memory with CRS action and based on a flexible substrate and a preparation method thereof. The resistive random access memory with the CRS action and based on the flexible substrate and the preparation method of the resistive random access memory with the CRS action and based on the flexible substrate rely on the sandwich structure of an original resistive random access memory, the sandwich structure is the structure with a bottom electrode, a resistance change layer and a top electrode, the flexible substrate is used as a substrate, and a stack functional layer structure is obtained through low-temperature atom layer deposition and physical vapor deposition technology. The preparation method of the resistive random access memory with the CRS action and based on the flexible substrate comprises the steps that the low-temperature atom layer deposition technology is used for enabling a dielectric layer to be deposited on the flexible substrate, physical vapor deposition is conducted on activated metal to enable the activated metal to be used as the top electrode, then deposition is conducted on an Al layer on the top electrode to prevent the top electrode from being oxidized. According to the resistive random access memory with the CRS action and based on the flexible substrate and the preparation method of the resistive random access memory with the CRS action and based on the flexible substrate, different oxygen deficit / oxygen enrichment type stack functional layers with different oxygen composition are prepared, the CRS action of an RRAM device is achieved, the problem of crosstalk caused by leaked currents in a crossed dot matrix integrated structure can be effectively solved, and a practical and reliable scheme is provided for future flexible electronic devices.