Fabrication of transferred-substrate HBT with simple technology

In this paper, transferred-substrate InP/InGaAs Single Heterojunction Bipolar Transistors (SHBT) are reported. Here, the first RF results showing f T =70 GHz and f max =110 GHz for a device with 2times10 mum 2 emitter and 3times12.5 mum 2 collector, are presented. Emphasis is given on the fabrication of the devices with rather simple methods without involving specialized or complicated equipment