Magnetic/III-V Semiconductor Based Hybrid Structures

The first generation spintronics based on the giant magneto-resistance effect in the magnetic multilayers has already generated huge impact to the mass data storage industries. The second generation spintronics based on magnetic-semiconductor hybrid structures aims to develop new spin based devices such as spin transistors and spin logic, which will not just improve the existing capabilities of electronic Y. Xu (*) York-Nanjing International Center of Spintronics, Nanjing University, Nanjing, China Spintronics and Nanodevice Laboratory, The University of York, York, UK e-mail: yongbing.xu@york.ac.uk J. Wong • W. Liu • D. Niu • W. Zhang • Y. Lu • S. Hassan • Y. Yan • I. Will York Laboratory of Spintronics and Nanodevices, Department of Electronics, The University of York, York, UK # Springer Science+Business Media Dordrecht 2016 Y. Xu et al. (eds.), Handbook of Spintronics, DOI 10.1007/978-94-007-6892-5_14 285 transistors, but will have new functionalities. These spin devices have the potential to integrate both data storage and processing, enabling future computers to run faster and at the same time consume less power. One of the major challenges for the development of the second generation spintronics is the integration of the magnetic and semiconductor materials. In this chapter, we will present the growth, interface magnetism and magneto-transport of several important magnetic/ semiconductor hybrid spintronic structures, in particular, with III-V semiconductors such as GaAs and InAs. The magnetic materials include both ferromagnetic metals, Fe, Co and Ni and half metallic magnetic oxides, where a large spin polarisation at the Fermi is expected. The chapter will also review the modified magnetic properties in the patterned single crystal dots due to either dipole interaction or intrinsic structure changes. List of Abbreviations AFM Atomic force microscopy APB Antiphase boundary BCC Body centered cubic CMOS Complementary metal-oxide-semiconductor DFT Density function theory DMS Diluted magnetic semiconductor DOS Density of state EDX Energy dispersive X-ray EM Electron microscope FCC Face centered cubic FET Field effect transistor FM Ferroor ferri-magnetic material GMR Giant magnetoresistance HCP Hexagonal close packing HM Half metals HMS Hybrid magnetic semiconductor IT Information technology LED Light emission diode LEED Low energy electron diffraction MBE Molecular beam epitaxy ML Mono-layer MOCVD Metal-organic chemical vapor deposition MOKE Magneto-optical Kerr effect MOSFET Metal oxide semiconductor FET MR Magnetoresistance MRAM Magnetic random access memory MTJ Magnetic tunnel junction PLD Pulsed laser deposition QHE Quantum Hall effect QSHE Quantum spin Hall effect 286 Y. Xu et al.