Experimental and theoretical investigation of temperature effects on an interbedded betavoltaic employing epitaxial Si and bidirectional (63)Ni.

Abstract The performance of an interbedded betavoltaic employing epitaxial Si and bidirectional 63 Ni was measured and calculated at various temperatures. The experimental results indicate that the temperature dependence of the performance of interbedded betavoltaics is similar to that of monolayer betavoltaics: V oc and P max decrease approximately linearly with increasing temperature at low temperatures of 213.15–253.15 K and decrease exponentially with increasing temperature at high temperatures of 253.15–333.15 K. However, the calculation results indicate that the temperature dependences of V oc and P max are always linear at both high and low temperatures. I sc increases slightly with increasing temperature in both experiment and calculation.