A 30.1 mW / µm2 SiGe:C HBT featuring an implanted collector in a 55-nm CMOS node

This letter deals with the load-pull measurements at 94 GHz of 450 GHz Si/SiGe ${f} _{\text {T}}$ HBTs. On the one hand the technological modifications performed to improve large signal performances are presented and on the other hand, load-pull measurements are presented after having describing the measurement setup. A state-of-the-art 30.1 mW / $\mu \text{m}^{{{2}}}$ Si/SiGe HBT is demonstrated thanks to a layout optimization.