Excimer laser annealing of ferroelectric SrBi2Ta2O9 thin films prepared by metal organic chemical vapor deposition

(103) preferentially oriented ferroelectric SrBi 2 Ta 2 O 9 (SBT) thin films were sequentially prepared after depositing bismuth (Bi) seeding layers at 600°C on to the (111) oriented Pt/Ti/SiO 2 /Si substrates by metal organic chemical vapor deposition (MOCVD). The SBT films with Bi seeding layers showed stronger (103) orientation than those without the Bi seeding layer. Then, the (103) oriented SBT films were irradiated by the excimer laser annealing system (ELA) with line beam (0.4 mm x 200 mm) in order to improve the crystallinity. The surface roughness (Ra) and gradient angle (Δa) of the SBT films irradiated by the excimer laser drastically decreased to Ra = 2.27 nm, Δa = 7.17∠ in comparison with those of as deposited films of Ra = 8.15 nm, Δa = 18.17∠, respectively. The breakdown voltage (abrupt jump of leakage current) with irradiated films was significantly improved to 5 V compared with that of as deposited films of 2V.