Single event effects induced by 15.14 MeV/u Xe-136 ions

Single event effects induced by 15.14MeV/u Xe-136 ions in different batches of 32k x 8 bits static random access memory are studied. The incident angle dependences of the cross sections for single event upset and single event latchup are presented. The SEE cross sections are plotted versus energy loss instead of linear energy transfer value in sensitive region. The depth of sensitive volume and thickness of "dead" layer above the sensitive volume are estimated.