Old Web
English
Sign In
Acemap
>
Paper
>
Gadolinium Oxide(Gd2O3) Blocking Layer for Fast Program and Erase Speed in SONOS-Type Flash Memory Devices
Gadolinium Oxide(Gd2O3) Blocking Layer for Fast Program and Erase Speed in SONOS-Type Flash Memory Devices
2008
Byung-Jin Cho
Jing Pu
Sj Kim
Ys Kim
Keywords:
Optoelectronics
Gadolinium oxide
Materials science
Flash memory
blocking layer
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]