Monolithic GaAs Dual-Gate FET Phase Shifter.

Abstract : This report describes the progress made, during the period 1 Sept. 1980 to 31 Dec. 1980, in the development of a monolithic GaAs dual-gate FET phase shifter. The development of a 0 degrees to 360 degrees phase shifter using discrete components is described. The results on the variation of phase shift with bias voltages of the dual-gate FETs are presented over 4- to 8-GHz band. The progress made in the development of monolithic 0 to 90 phase shifter is also presented. (Author)