Multipeak negative-differential-resistance device by combining SET and MOSFET

A multipeak negative-differential-resistance(NDR) device which comprises a single-electron transistor (SET) and a metaloxide-semiconductor field-effect-transistor (MOSFET) can achieve infinite number of peaks in,principle. The MOS device eliminates the large SD voltage dependence of the peak and volley currents of the SET. The multipeak NDR device can be widely used in multiple-valued logics, and analog-to-digital converters (ADCs). We obtain a multiple-valued memory unit through the multipeak NDR device. And by using the folding I-V characteristic, a four-bit ADC is achieved. Compared with the traditional flash ADC, the SET-MOSFET ADC is very simple.