Field effect studies on p-type PbTe metal/insulator/semiconductor structures

Abstract Field effect studies on metal/insulator/semiconductor structures of Ag/mica/p-PbTe were made in the temperature range 120–300 K. It was observed that the effect of a negative voltage is to decrease the Hall coefficient, the Hall mobility and the defect scattering mobility. A positive gate voltage has the opposite effect and to a smaller extent. These results are explained on the basis of accumulation and depletion of charges induced by the field at the surface.