Wunsch–Bell Criterial Dependence for Si and GaAs Schottky-Barrier Field-Effect Transistors

In this chapter a numerical mathematical model of the Si and GaAs Schottky-barrier field-effect transistor is considered. This model permits current and thermal modes of these devices to be investigated when reaction of powerful electromagnetic pulses takes place. In this case changing characteristics of semiconducting materials with increasing temperature is taken into account. Using the mathematical model allows dynamics of electrothermal processes to be studied including an outgrowth of avalanche process, forming current “cord,” thermal breakdown of the devices. The computer modeling results showed that in studies of the external reaction of the electromagnetic pulses with semiconductor devices as criterion of the resistance it is necessary to take into account the volume density of power instead of its surface density.