High-temperature oxide film formation method for Eeprom device

(57) Abstract: ONO floating gate electrode (26) in two-bit EEPROM device (10) manufacturing method is intended to include the formation of a top oxide film (32) using a high temperature oxide film (HTO) film forming method , the HTO method is carried out at a temperature of about 700 to about 800 ℃ by either LPCVD or RTCVD thin film deposition apparatus. The manufacturing method uses the top oxide film (32) an LPCVD or RTCVD deposition method of in-situ without exposure to the atmosphere, a silicon nitride film (30) before forming the silicon nitride film (30) and the top oxide further comprises a sequentially forming a film (32). Those forming the uppermost oxide film using the HTO film forming method (32), for providing 2-bit EEPROM memory device with improved performance by reducing the charge leakage paths in the ONO floating gate electrode (26) and (10) it is.