Nonvolatile memory device and method for fabricating the same

The present technology relates to a nonvolatile memory device and a manufacturing method thereof. The nonvolatile memory device according to the present technology includes: a cell string which includes a plurality of memory cells on a substrate and is extended in one direction; a channel layer which is connected to one side and the other side of the cell string and extended in a direction which is vertical to the substrate; a selection gate electrode which is located on the upper surface of the cell string and surrounds the side of the channel layer by interposing a gate dielectric layer; and a conductive line which is connected to the upper end of the channel layer. According to the present technology, the size of a chip is reduced by forming the selection gate electrode on the upper surface of the cell string and a manufacturing process is simplified and facilitated at the same time. The operational properties of the nonvolatile memory device are improved.