Two-dimensional nano molybdenum sulfide sheet layer/binary oxide laminated structure type resistive random access memory

The invention discloses a two-dimensional nano molybdenum sulfide sheet layer/binary oxide laminated structure type resistive random access memory and a fabrication method therefor, and provides a novel resistive random access memory. The resistive random access memory is formed by superposing a lower electrode, a resistive random layer and an upper electrode in sequence, wherein the resistive random layer is composed of a two-dimensional nano molybdenum sulfide sheet layer and a binary oxide laminated structure. According to the resistive random access memory and the fabrication method, the inserted two-dimensional nano molybdenum sulfide sheet layer and binary oxide laminated structure are taken as the resistance change function layer, so that the formation and fracture of oxygen vacancy conductive filaments are adjusted while excellent performance of a separate binary oxide resistive random access memory is kept; and meanwhile, the generation of excessive oxygen vacancies is suppressed in a set process, the resistance value of a low resistance state is increased, and the reset current of the device is reduced. Compared with the separate binary oxide resistive random access memory, the resistive random access memory provided by the invention has better consistency and lower power consumption. The application fields of the two-dimensional nano molybdenum sulfide sheet layer are further enriched and a new direction is provided for further improving the performance of the resistive random access memory.