Metal contact, resistivity and Hall measurement studies of a quasi monocrystalline porous silicon layer vis-à-vis porous silicon

Low-porosity (~20?30%) porous silicon produced by electrochemical anodization was thermally annealed at high temperature (1050?1100 ?C) for 30 min in H2 atmosphere to convert it to quasi monocrystalline porous silicon (QMPS). Grazing incidence x-ray diffraction and field emission scanning electron microscopy confirmed the formation of QMPS. The electrical contacts to QMPS layers were studied with Au and Al and compared with that of porous silicon. Al confirmed the ohmic nature to QMPS. The resistivity of QMPS layers was in the range of 5?20 ? cm as determined by a two-point probe as well as by van der Pauw methods. The average hole mobility (71 cm2 V?1 s?1) obtained from Hall effect studies agreed well with the reported value (67 cm2 V?1 s?1). The QMPS layer thus obtained may be a potential active material for solar cells after successful layer transfer.