A novel 600V structure with Split P-Buried Floating Layer and doping trench

A novel low on-resistance 600V structure with Split P-Buried Floating Layer(SBFL) and doping trench is proposed and demonstrated by simulation. This novel structure can overcome big reverse leakage current problem of conventional SBFL, and keep its low on-resistance advantage. Its specific on-resistance is 43% less than ideal parallel-plane junction stucture at 600V blocking voltage, from 73.3 mO.cm 2 to 41.7 mO.cm 2 .