Uniform-field model of a-Si:H pin solar cells

Abstract The assumption of a uniform field through the i-layer absorber of an a-Si:H pin solar cell seems to be hardly realistic. The analytical models based on this assumption have been nevertheless rather successful. A few calculations will demonstrate this. In connection with suitable experiments the roles of bulk and surface recombination become distinguishable. Spectral response measurements in particular reveal a strong influence of surface recombination, while the reverse dark currents stem from bulk recombination.