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Hydrogenated In–Ga–Zn–O thin-film transistors with anodized and fluorinated Al2O3 gate insulator for flexible devices
Hydrogenated In–Ga–Zn–O thin-film transistors with anodized and fluorinated Al2O3 gate insulator for flexible devices
2021
Syuya Kono
Yusaku Magari
Marin Mori
S. G. Mehadi Aman
Norbert Fruehauf
Hiroshi Furuta
Mamoru Furuta
Keywords:
Thin-film transistor
Anodizing
Materials science
gate insulator
Optoelectronics
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