Direct Copper Plating to IWO for Silicon Heterojunction Solar Cells

Indium tungsten oxide (IWO) can provide advantages over indium tin oxide (ITO) as a transparent conducting oxide silicon heterojunction (SHJ) solar cells due to its lower absorption in the long wavelength region. However, lowtemperature metallization methods are required for IWO-coated cells. This paper introduces a new process for the direct Cu plating to IWO surfaces for SHJ cells. The process, which employs a rapidly-plated initial seed Cu layer, can achieve strong interfacial adhesion and specific resistivity values as low as $1.81 \pm 0.32\mathrm {m}~\mathrm {W} {-cm}$ 2