Influence of interface traps inside the conduction band on the capacitance–voltage characteristics of InGaAs metal–oxide–semiconductor capacitors

We investigated the influences of the AC response with interface/bulk-oxide traps near the conduction band (CB) and a low effective density of states (DOS) on the accumulation capacitance C acc of an n-type InGaAs metal–oxide–semiconductor (MOS) capacitor. We found that the capacitance associated with the interface traps inside the CB significantly increases C acc compared to the C acc value constrained by a low DOS. These results indicate that accurate characterization inside the CB and considering the capacitance due to the interface traps inside the CB in the MOS capacitance–voltage curves are indispensable for accurate characterization of InGaAs MOS interface properties.