A study of Ta/sub 2/O/sub 5//rugged Si capacitor of 23 /spl mu/C//spl mu/m/sup 2/ applied to high-density DRAMs using sub-0.2 /spl mu/m process

The Ta/sub 2/O/sub 5//rugged Si capacitor was shown to be remarkably reliable for mass production of high-density DRAMs. Our investigation with large scale test capacitors and full-scale 64-Mbit and 256-Mbit DRAMs confirmed that it has low leakage current, low defect density, good retention characteristics, and superior TDDB lifetime for high-density DRAMs.