A reconfigurable S-/X-band GaN cascode LNA MMIC

This paper reports on a frequency agile GaN LNA MMIC that can be reconfigured for both S- and X-band extending operation over multiple octaves of frequency. The LNA is based on a 0.15um GaN HEMT technology and utilizes GaN FET switches to tune the LNA for 3–3.5 GHz Sband and 9–11 GHz X-band operation. Switch tuned for Sband, the amplifier achieves 15 dB of gain, NF ranging from 0.9–1.3 dB, an input return-loss better than 10 dB, and an IP3 of 29.2–32.8 dBm. Switch tuned for X-band, the amplifier achieves a gain of 13.5–14.5 dB, a NF ranging from 1.4–2.2 dB, an input return-loss from 11–12 dB, and an IP3 of 29.534.5 dBm. To the authors' knowledge, this work is the first band reconfigurable GaN LNA reported up to X-band frequencies. The LNA demonstrates comparable or better combined NF & input return-loss performance than previous single-band optimized GaN LNAs reported at X-band.