Evidence for molecular hydrogen in single crystal silicon

Abstract Rutherford backscattering in channeling in combination with elastic recoil detection analysis has been used to study the formation and destruction of hydrogen “supermolecular” complexes (H 2 ) n formed in single crystal silicon after hydrogen implantation and annealing in the range 150–800°C. Secondary ion mass spectroscopy has been used to confirm this interpretation by giving direct evidence for H 2 . The supermolecular configuration can be interpreted as the nucleus for the formation of bubbles.