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Fabrication of AlGaN/GaN MOSFETs with Al2O3 gate oxide deposited by atomic layer deposition
Fabrication of AlGaN/GaN MOSFETs with Al2O3 gate oxide deposited by atomic layer deposition
2011
Miyazaki Eiji
Gouda Takeshi
Kishimoto Shigeru
Mizutani Takashi
Keywords:
Gate oxide
Atomic layer deposition
Analytical chemistry
Materials science
algan gan
Fabrication
Optoelectronics
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