Estimation of ultra-shallow implants using SIMS, NRA and chemical analysis

Estimation methods for ultra-shallow implants (boron and arsenic) were investigated. SIMS analysis enables accurate junction depth estimation for ultra-shallow junctions, when concentration and depth calibration methods using bulk-doped samples and multi-delta-structure samples are used together. Even with this advanced SIMS measurement, accurate implant doses cannot be estimated for ultra-shallow implants. NRA and chemical analyses have been developed for accurate measurements of boron and arsenic doses, respectively. Using three analytical methods (SIMS, NRA and chemical analysis), junction depths and implant doses can be estimated accurately and precisely.